Zhuocheng Zhang

Scholarly work

Publications

The device record behind the workflow work.

1,260+ citations h-index 20 Google Scholar

36 publications

  1. 2026

    Breakdown of Ohm’s Law by Disorders in Low-Dimensional Transistors

    C. Niu, A. Charnas, J.-Y. Lin, L. Long, Z. Lin, Z. Zhang, P. D. Ye

    Nano Letters

  2. 2025

    Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors

    J. Zhang, C. Zhou, H. Dou, Z. Zhang, Z. Lin, K. Xu, X. Zhang, H. Wang, H. Zhu, W. Yang, P. D. Ye

    IEEE Transactions on Electron Devices

  3. 2025

    Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs

    S. Lee, C. Niu, C.-A. Shih, J.-Y. Lin, Z. Zhang, Y. Zhang, L. Long, H. Wang, M. A. Alam, P. D. Ye

    IEEE Transactions on Electron Devices

  4. 2024

    Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory

    Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, D. Ha, H. Wang, M. A. Alam, P. D. Ye

    IEEE Transactions on Electron Devices

  5. 2024

    First Demonstration of Top-Gate Enhancement-Mode ALD In₂O₃ FETs with High Thermal Budget of 600 °C for DRAM Applications

    J.-Y. Lin, Z. Zhang, Z. Lin, C. Niu, Y. Zhang, Y. Zhang, T. Kim, H. Jang, C. Sung, M. Hong, S. Lee, T. Lee, M. Cho, D. Ha, C. Jeong, H. Wang, M. A. Alam, P. D. Ye

    IEEE Electron Device Letters

  6. 2024

    Highly Robust All-Oxide Transistors with Ultrathin In₂O₃ as Channel and Thick In₂O₃ as Metal Gate Towards Vertical Logic and Memory

    Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, D. Ha, H. Wang, M. A. Alam, P. D. Ye

    IEEE Symposium on VLSI Technology and Circuits

  7. 2024

    Superconducting Field-Effect Transistors with PdₓTe–Te Intimate Contacts

    C. Niu, M. Wang, Z. Zhang, G. Qiu, Y. Wang, D. Zheng, P.-Y. Liao, W. Wu, P. D. Ye

    ACS Nano

  8. 2024

    Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In₂O₃ Thin-Film Transistors

    C. Niu, Z. Lin, V. Askarpour, Z. Zhang, P. Tan, M. Si, Z. Shang, Y. Zhang, H. Wang, M. S. Lundstrom, J. Maassen, P. D. Ye

    IEEE Transactions on Electron Devices

  9. 2024

    Extremely Thin Amorphous Indium Oxide Transistors

    A. Charnas, Z. Zhang, Z. Lin, D. Zheng, J. Zhang, M. Si, P. D. Ye

    Advanced Materials

  10. 2023

    First Determination of Thermal Resistance and Thermal Capacitance of Atomic-Layer-Deposited In₂O₃ Transistors

    J.-Y. Lin, Z. Zhang, S. Alajlouni, P.-Y. Liao, Z. Lin, C. Niu, A. Shakouri, P. D. Ye

    IEEE International Electron Devices Meeting

  11. 2023

    Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off

    J. Zhang, Z. Zhang, H. Dou, Z. Lin, K. Xu, W. Yang, X. Zhang, H. Wang, P. D. Ye

    IEEE International Electron Devices Meeting

  12. 2023

    Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In₂O₃ TFTs Reaching the Quantum Limit

    C. Niu, Z. Lin, Z. Zhang, P. Tan, M. Si, Z. Shang, Y. Zhang, H. Wang, P. D. Ye

    IEEE International Electron Devices Meeting

  13. 2023

    Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

    J. Zhang, Z. Lin, Z. Zhang, K. Xu, H. Dou, B. Yang, A. Charnas, D. Zheng, X. Zhang, H. Wang, P. D. Ye

    IEEE Transactions on Electron Devices

  14. 2023

    High-pressure Induced Weyl Semimetal Phase in 2D Tellurium

    C. Niu, Z. Zhang, D. Graf, S. Lee, M. Wang, W. Wu, T. Low, P. D. Ye

    Communications Physics

  15. 2023

    First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability

    J. Zhang, Z. Zhang, Z. Lin, K. Xu, H. Dou, B. Yang, X. Zhang, H. Wang, P. D. Ye

    IEEE Symposium on VLSI Technology and Circuits

  16. 2023

    Ultrahigh Bias Stability of ALD In₂O₃ FETs Enabled by High Temperature O₂ Annealing

    Z. Zhang, Z. Lin, C. Niu, M. Si, M. A. Alam, P. D. Ye

    IEEE Symposium on VLSI Technology and Circuits

  17. 2023

    Effect of Ga-Doping on Atomic-Layer-Deposited Ultrathin InGaO Thin Film Transistors with BEOL-Compatibility

    J. Zhang, Z. Zhang, D. Zheng, Z. Lin, A. Charnas, P. D. Ye

    International VLSI Symposium on Technology, Systems and Applications

  18. 2023

    Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs Toward Monolithic 3-D Integration

    P.-Y. Liao, D. Zheng, S. Alajlouni, Z. Zhang, M. Si, J. Zhang, J.-Y. Lin, T. I. Feygelson, M. J. Tadjer, A. Shakouri, P. D. Ye

    IEEE Transactions on Electron Devices

  19. 2023

    Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility

    J. Zhang, Z. Zhang, Z. Lin, D. Zheng, P. D. Ye

    IEEE Electron Devices Technology & Manufacturing Conference

  20. 2023

    Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition

    J. Zhang, D. Zheng, Z. Zhang, A. Charnas, Z. Lin, P. D. Ye

    IEEE Electron Device Letters

  21. 2023

    Alleviation of Self-Heating Effect in Top-Gated Ultrathin In₂O₃ FETs Using a Thermal Adhesion Layer

    P.-Y. Liao, K. Khot, S. Alajlouni, M. Snure, J. Noh, M. Si, Z. Zhang, A. Shakouri, X. Ruan, P. D. Ye

    IEEE Transactions on Electron Devices

  22. 2022

    First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability

    D. Zheng, A. Charnas, J. Anderson, H. Dou, Z. Hu, Z. Lin, Z. Zhang, J. Zhang, P. Y. Liao, M. Si, H. Wang, D. Weinstein, P. D. Ye

    IEEE International Electron Devices Meeting

  23. 2022

    Reliability of Atomic-Layer-Deposited Gate-All-Around In₂O₃ Nano-Ribbon Transistors with Ultra-High Drain Currents

    Z. Zhang, Z. Lin, A. Charnas, H. Dou, Z. Shang, J. Zhang, M. Si, H. Wang, M. A. Alam, P. D. Ye

    IEEE International Electron Devices Meeting

  24. 2022

    Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond

    P. Y. Liao, S. Alajlouni, Z. Zhang, Z. Lin, M. Si, J. Noh, T. I. Feygelson, M. J. Tadjer, A. Shakouri, P. D. Ye

    IEEE International Electron Devices Meeting

  25. 2022

    Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

    Z. Lin, M. Si, V. Askarpour, C. Niu, A. Charnas, Z. Shang, Y. Zhang, Y. Hu, Z. Zhang, P.-Y. Liao, K. Cho, H. Wang, M. Lundstrom, J. Maassen, P. D. Ye

    ACS Nano

  26. 2022

    A Gate-All-Around In₂O₃ Nanoribbon FET with Near 20 mA/µm Drain Current

    Z. Zhang, Z. Lin, P.-Y. Liao, V. Askarpour, H. Dou, Z. Shang, A. Charnas, M. Si, S. Alajlouni, A. Shakouri, H. Wang, M. Lundstrom, J. Maassen, P. D. Ye

    IEEE Electron Device Letters

  27. 2022

    Fluorine-passivated In₂O₃ thin film transistors with improved electrical performance via low-temperature CF₄/N₂O plasma

    J. Zhang, A. Charnas, Z. Lin, D. Zheng, Z. Zhang, P.-Y. Liao, D. Zemlyanov, P. D. Ye

    Applied Physics Letters

  28. 2022

    Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In₂O₃ FETs

    P.-Y. Liao, S. Alajlouni, M. Si, Z. Zhang, Z. Lin, J. Noh, C. Wilk, A. Shakouri, P. D. Ye

    IEEE Symposium on VLSI Technology and Circuits

  29. 2022

    Vertically Stacked Multilayer Atomic-layer-deposited Sub-1-nanometer In₂O₃ Field-effect Transistors with Back-end-of-line Compatibility

    Z. Zhang, Z. Lin, M. Si, D. Zhang, H. Dou, Z. Chen, A. Charnas, H. Wang, P. D. Ye

    Applied Physics Letters

  30. 2022

    BEOL-Compatible, ALD-grown In₂O₃ Top-Gate FETs with Maximum Drain Current of 3 A/mm through Thermal Engineering and Pulse Measurement

    P.-Y. Liao, M. Si, Z. Zhang, Z. Lin, P. D. Ye

    International VLSI Symposium on Technology, Systems and Applications

  31. 2022

    Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

    Z. Zhang, Y. Hu, Z. Lin, M. Si, A. Charnas, K. Cho, P. D. Ye

    IEEE Transactions on Electron Devices

  32. 2022

    Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering

    P.-Y. Liao, M. Si, Z. Zhang, Z. Lin, P. D. Ye

    IEEE Transactions on Electron Devices

  33. 2021

    Atomically thin In₂O₃ field-effect transistors with 10¹⁷ current on/off ratio

    A. Charnas, Z. Lin, Z. Zhang, P. D. Ye

    Applied Physics Letters

  34. 2021

    Asymmetric Metal/a-In₂Se₃/Si Crossbar Ferroelectric Semiconductor Junction

    M. Si, Z. Zhang, S.-C. Chang, N. Haratipour, D. Zheng, J. Li, U. E. Avci, P. D. Ye

    ACS Nano

  35. 2020

    Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

    G. Qiu, C. Niu, Y. Wang, M. Si, Z. Zhang, W. Wu, P. D. Ye

    Nature Nanotechnology

  36. 2020

    Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization

    C. Niu, G. Qiu, Y. Wang, Z. Zhang, M. Si, W. Wu, P. D. Ye

    Physical Review B